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Philip Fei-Ling Wang

Philip Fei-Ling Wang

· Philip Fei-Ling Wang | Sam Nunn School of International Affairs

Georgia Institute of Technology · Sam Nunn School of International Affairs

Active 2016–2022

h-index16
Citations669
Papers3422 last 5y
Funding—

Academic metrics are sourced from OpenAlex and public funding records; values may differ from Google Scholar.

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About

Philip Fei-Ling Wang is a Professor at the Sam Nunn School of International Affairs at Georgia Tech. His office is located in Habersham 215, and he can be reached by phone at 404-894-1904. The page does not provide specific details about his research focus, background, or key contributions.

Research topics

  • Materials science
  • Computer science
  • Optoelectronics
  • Electronic engineering
  • Nanotechnology

Selected publications

  • Direct comparison of ferroelectric properties in Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> between thermal and plasma-enhanced atomic layer deposition

    Nanotechnology · 2020-07-14 · 67 citations

    article

    Abstract Since the discovery of ferroelectricity in doped/alloyed HfO 2 and ZrO 2 thin film, many device engineers have been attracted to its sustainable ferroelectricity at the thickness of a few nanometer. While most of the previous studies have mainly focused on the ferroelectric properties of the thermally atomic layer deposited (THALD) Hf 0.5 Zr 0.5 O 2 (HZO), the plasma-enhanced ALD (PEALD) HZO has not received much attention. In this work, a direct comparison between the two types of HZO…

    PublisherDOI

  • Non-volatile, small-signal capacitance in ferroelectric capacitors

    Applied Physics Letters · 2020-08-17 · 47 citations

    article

    Tunable, non-volatile, small-signal capacitance is observed and characterized in a TiN/ferroelectric Hf0.5Zr0.5O2 (HZO)/TiN stack. The non-volatility of the small-signal capacitance originates from the non-uniform distribution of oxygen vacancies near/at the bottom electrode, resulting in polarity-dependent responses of the domain-wall vibration. Our hypothesis also agrees with the observed frequency dispersion, which could be explained with the Maxwell Wagner effect. Furthermore, we have shown…

    PublisherDOI

  • Drain–Erase Scheme in Ferroelectric Field-Effect Transistor—Part I: Device Characterization

    IEEE Transactions on Electron Devices · 2020-02-13 · 47 citations

    article1st authorCorresponding

    Ferroelectric-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for in-memory computing. In this two-part article, we explore the feasibility of FeFET-based 3-D NAND architecture for both in situ training and inference. To address the challenge of erase-by-block in NAND-like structure, we propos…

    PublisherDOI

  • Ferroelectric HfO <sub>2</sub> -based synaptic devices: recent trends and prospects

    Semiconductor Science and Technology · 2021-08-05 · 46 citations

    articleSenior author

    Abstract Neuro-inspired deep learning algorithms have shown promising futures in artificial intelligence. Despite the remarkable progress in software-based neural networks, the traditional von-Neumann hardware architecture has suffered from limited energy efficiency while facing unprecedented large amounts of data. To meet the performance requirements of neuro-inspired computing, large-scale vector-matrix multiplication is preferred to be performed in situ , namely compute-in-memory. Non-volatil…

    PublisherDOI

  • Cryogenic behavior of NbO2 based threshold switching devices as oscillation neurons

    Applied Physics Letters · 2020-04-20 · 41 citations

    article1st author

    This Letter investigates the cryogenic behavior of NbO2 threshold switching devices. Pt/NbO2/Pt devices are demonstrated to be well functional as threshold switching devices at ultra-low temperature (4 K). When the temperature decreases, the OFF-state resistance of NbO2 increases and the switching voltage increases. With the extracted characteristics of NbO2 ranging from 4 K to 300 K, we continue to study the neuromorphic system using the crossbar array with resistive memories as resistive synap…

    PublisherDOI

Frequent coauthors

  • Shimeng Yu

    Georgia Institute of Technology

    27 shared

  • Asif Islam Khan

    Georgia Institute of Technology

    17 shared

  • Yihan Chen

    State Key Laboratory of Food Science and Technology

    14 shared

  • Jae Hur

    Inha University

    13 shared

  • Mansun Chan

    12 shared

  • Zheng Wang

    9 shared

  • Lining Zhang

    Peking University

    8 shared

  • Suwen Li

    Huaibei Normal University

    8 shared

Education

  • PhD, Electrical Engineering

    Georgia Institute of Technology

  • Ph.D., School of Electrical, Computer and Energy Enginnering

    Arizona State University

    2019

  • Mphil, ECE

    Hong Kong University of Science and Technology

    2017

Awards & honors

  • Minerva Chair grant
  • Fulbright Senior Scholar grant
  • Hitachi Fellowship
  • Member of the Council on Foreign Relations

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