Levon Asryan

About

Levon Asryan is an associate professor at Virginia Tech in the Department of Materials Science and Engineering. His research interests include the physics of semiconductor materials and devices, nano- and optoelectronics, and photonics. He specializes in low-dimensional heterostructures, nanostructures, quantum dots, and quantum wells, with a focus on the theory of semiconductor quantum dot lasers and quantum well lasers. Dr. Asryan holds a Ph.D. in Physics and Mathematics and a Doctor of Sciences in Physics and Mathematics from the Ioffe Institute in St. Petersburg, Russia. His notable contributions include fundamental investigations of heterostructures with quantum dots and the development of quantum dot lasers. He has been recognized with the Highest Award (State Prize) of the Russian Federation in Science and Technology in 2001 for his work in this field. Additionally, he received the First Best Paper Award from the IEEE Journal of Quantum Electronics in 2001. He is a senior member of SPIE and IEEE, reflecting his active engagement and recognition in the scientific community.

Research topics

• Materials science
• Physics
• Optics
• Optoelectronics
• Thermodynamics
• Atomic physics
• Chemistry

Selected publications

• Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

  Journal of Applied Physics · 2018-10-05 · 12 citations

  articleOpen access

  The feasibility of implementation of asymmetric barriers (ABs) made of common materials for completely aluminum-free diode lasers is studied. The ABs adjoining a low-dimensional active region on both sides aim to prevent bipolar population in the waveguide layers and thus to suppress parasitic recombination therein, which in turn would enhance the efficiency and temperature-stability of the device. Our search algorithm for appropriate AB materials relies on the minimization of undesired carrier…

  PublisherOA PDFDOI

• Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics

  Quantum Electronics · 2019-06-01 · 8 citations

  article1st authorCorresponding

  Abstract A theory of static (threshold and power) characteristics of novel diode lasers – quantum dot (QD) lasers with asymmetric barrier layers (ABLs) – is developed. The barrier layers are asymmetric in that they have considerably different heights for the carriers of opposite signs. The ABL located on the electron- (hole-) injecting side of the structure provides a low barrier (ideally no barrier) for electrons (holes) [so that it does not prevent electrons (holes) from easily approaching the…

  PublisherDOI

• Parasitic Recombination in a Laser with Asymmetric Barrier Layers

  Semiconductors · 2020 · 5 citations

  Senior authorCorresponding

  In a laser with asymmetric barrier layers (ABLs) two thin barrier layers adjacent to the active region on both sides are intended to prevent bipolar population of the waveguide layers, hence, to suppress parasitic recombination in them. A theoretical model of a laser with ABLs, based on rate equations which acknowledge undesirable carrier leakage inevitable in lasers of this type implemented in practice, is proposed. Solutions to equations are obtained for the steady-state case. By the example o…

  PublisherDOI

• Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers

  Semiconductors · 2018-11-07 · 4 citations

  article1st authorCorresponding

  A self-consistent model for calculating the threshold and high-power characteristics of semiconductor quantum well lasers with asymmetric barrier layers is developed. The model, which is based on a system of rate equations, uses the universal condition of global charge neutrality in the laser structure. The electron and hole concentrations in the waveguide region and in the quantum well (QW) and the concentration of photons of stimulated emission are calculated. The local neutrality in the QW is…

  PublisherDOI

• Evolution of light‐current characteristic shape in high‐power semiconductor quantum well lasers

  Electronics Letters · 2019-03-08 · 3 citations

  articleOpen accessSenior authorCorresponding

  The light‐current characteristic (LCC) of semiconductor quantum well lasers is theoretically studied. It is discussed here that, due to internal optical absorption loss, which depends on the electron and hole densities in the optical confinement layer, (i) roll‐over of the LCC occurs with increasing injection current, and, (ii) depending on the parameters of laser structures, the LCC can have two branches, i.e. the optical emission at two different output powers will be possible within a certain…

  PublisherOA PDFDOI

Frequent coauthors

• R. A. Suris

  53 shared

• Serge Luryi

  Stony Brook University

  48 shared

• A. E. Zhukov

  National Research University Higher School of Economics

  29 shared

• M. V. Maximov

  29 shared

• F. I. Zubov

  24 shared

• Z. N. Sokolova

  Ioffe Institute

  21 shared

• N. V. Kryzhanovskaya

  National Research University Higher School of Economics

  14 shared

• Elizaveta Semenova

  Technical University of Denmark

  12 shared

Labs

• Materials Science and Engineering at Virginia TechPI

Awards & honors

• Highest Award (State Prize) of the Russian Federation in Sci…
• First Best Paper Award of the IEEE Journal of Quantum Electr…
• Senior Member, SPIE (2019)
• Senior Member, IEEE (2005)

Similar researchers at Virginia Tech

• Jiefang Lih-62
• Guo-Quan Luh-51
• Suneel Kodambakah-40