Guo-Quan Lu

About

Guo-Quan Lu is a professor jointly appointed in the Department of Materials Science and Engineering and the Department of Electrical and Computer Engineering at Virginia Tech. His research interests focus on electronic packaging and electronic materials, specifically the packaging of power semiconductor devices and modules, material synthesis for die bonding, electrical insulation, and magnetic components, as well as the reliability of power semiconductor packages. He is the Director of the Power Electronics Materials, Modules, and Manufacturing Laboratory. Dr. Lu earned his Ph.D. in applied physics and materials science from Harvard University in 1999, following a master's degree in the same field in 1989. He also holds bachelor's degrees in materials science and engineering and physics from Carnegie Mellon University, obtained in 1984. Throughout his career, he has contributed significantly to the field of power electronics and electronic packaging, earning numerous honors including being named an IEEE Fellow in 2018, receiving the IEEE IAS 1st Place Paper Award in 2019, and the IEEE ICEP-IAAC Outstanding Technical Paper Award in 2019. He has served as a topic chair and technical program chair for various international conferences and has been actively involved in professional activities such as organizing workshops and serving as an associate editor for the ASME Journal of Electronic Packaging.

Research topics

• Computer Science
• Optoelectronics
• Physics
• Composite material
• Materials science
• Nanotechnology

Selected publications

• Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability

  IEEE Transactions on Power Electronics · 2021 · 115 citations

  Ultrawide-bandgap gallium oxide (Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) devices have recently emerged as promising candidates for power electronics; however, the low thermal conductivity ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> <sub xmlns:mml="http://www.w3.org…

  DOI

• A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

  IEEE Transactions on Power Electronics · 2021 · 97 citations

  Senior authorCorresponding

  Planar, double-side cooled power modules are emerging in electric-drive inverters because of their low profile, better heat extraction, and lower package parasitic inductances. However, there is still a concern about their reliability due to the rigid interconnection between the device chips and two substrates of the power module. In this article, a porous interposer made of low-temperature sintered silver is introduced to reduce the thermomechanical stresses in the module. A double-side cooled…

  DOI

• Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

  IEEE Electron Device Letters · 2021 · 61 citations

  The low thermal conductivity of Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> has arguably been the most serious concern for Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>…

  DOI

• Double-Sided Cooling Half-Bridge Power Module of 650V/150A Gallium Nitride High-Electron-Mobility Transistor

  IEEE Transactions on Industrial Electronics · 2024-04-29 · 9 citations

  articleSenior author

  The efficiency and power density of power conversion systems can be greatly improved by utilizing gallium nitride high-electron-mobility transistors (GaN HEMTs) due to their ultra-low on-resistances and switching energy losses. However, the wide adoption of these transistors is hindered by the challenges of packaging them within power modules to minimize parasitic inductances and maximize heat extraction. To address these challenges, in this article a packaging concept is proposed and experiment…

  PublisherDOI

• Insulation Capability at 10 kV, &gt;300 V/ns of a Nonlinear Resistive Polymer Nanocomposite Field-Grading Coating in a 15-kV Silicon Carbide Module

  IEEE Transactions on Power Electronics · 2024-08-26 · 6 citations

  articleSenior author

  Emerging medium-voltage silicon carbide devices offer the potential to achieve more efficient and compact power electronics for grid-tied applications. However, the lack of an effective insulation solution for packaging the devices has slowed their widespread adoption. Recently, a nonlinear resistive polymer nanocomposite coating has been introduced to enhance the insulation by reducing localized electric field stress inside the modules. The purpose of this study is to evaluate the insulation ca…

  PublisherDOI

Recent grants

• NSF/DOE Thermoelectrics Partnership, Collaborative Proposal: Project SEEBECK - Saving Energy Effectively By Engaging in Collaborative research and sharing Knowledge

  NSF · $345k · 2011–2014

Frequent coauthors

• Yunhui Mei

  Tianjin Polytechnic University

  143 shared

• Khai D. T. Ngo

  Virginia Tech

  94 shared

• Xu Chen

  Tianjin University

  69 shared

• Xin Li

  48 shared

• Xin Li

  University of Science and Technology Beijing

  45 shared

• Jesus N. Calata

  Virginia Tech

  34 shared

• Gang Chen

  Tianjin Special Equipment Supervision and Inspection Technology Research Institute

  32 shared

• Xingsheng Liu

  Capital Medical University

  25 shared

Education

• Ph.D./Materials Science, Division of Applied Sciences

  Harvard University

  1990

• Double Major BS in MSE and Physics, Materials Science and Engineering

  Carnegie Mellon University

  1984

Awards & honors

• Chair, International Conference on Integrated Power Electron…
• Technical Program Chair/Co-Chair, International Symposium on…
• Outstanding Technical Paper Award, IEEE ICEP-IAAC Conference…
• 1st Place Paper Award, IEEE IAS Industrial Power Conversion…
• IEEE Fellow (2018)

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