About

Yousun Chung is an oboist and a performance faculty member at Princeton University. She has appeared internationally as a soloist, guest artist, chamber musician, and orchestral musician, performing in Europe, Asia, and throughout the United States. Based in New York, she has performed with prominent ensembles including the Metropolitan Opera Orchestra, New York Philharmonic, New York City Ballet, New York City Opera, Orpheus Chamber Orchestra, American Symphony Orchestra, Santa Fe Opera, and Sejong Soloists. Yousun Chung holds both Bachelor's and Master's degrees from The Juilliard School, where she studied with Elaine Douvas, Eugene Izotov, John Mack, and Linda Strommen, supported by the Eilleen Hayes Ludlam Memorial scholarship. She also earned a Professional Studies degree from the Mannes School of Music, studying with Elaine Douvas and Richard Dallessio. In her academic roles, she is a Lecturer of Oboe at Princeton University, a member of the oboe performance faculty at The Juilliard School Pre-college Division and the Mannes School of Music Prep Division, and an Adjunct Assistant Professor of Oboe at Brooklyn College Conservatory of Music. Her previous teaching positions include Senior Artist Teacher at the Hartt School of Music and a teaching artist at Columbia University. She has also served as a faculty member for Carnegie Hall’s National Youth Orchestra (NYO2), the Vianden International Music Festival in Luxembourg, and the Great Mountains International Music Festival in South Korea. Beyond her performance and teaching activities, Yousun Chung is the Artistic Director of Music Aloud, an organization dedicated to making music performance inclusive and accessible to underserved first-generation and low-income students. She has organized numerous recitals and fundraising concerts with her students and colleagues throughout the New York area.

Research topics

• Materials science
• Condensed matter physics
• Physics
• Optoelectronics
• Nanotechnology

Selected publications

• Dielectric oligonucleotide fragments enable ultralow threshold photomultiplication in infrared quantum dot photodetectors

  Chemical Engineering Journal · 2026-05-01

  article
  PublisherDOI

• Supplemental Online Material

  Open MIND · 2026-01-01

  other

  Supplemental Online Material

  DOI

• Designing cryo-compatible ferroelectric hafnia devices through electrode and interface control

  Materials Today Chemistry · 2026-04-01

  articleSenior authorCorresponding
  PublisherDOI

• Advances in Interfacial Engineering for Stable and Efficient Sn–Pb Perovskite Solar Cells

  Solar RRL · 2026-01-01

  article

  This review provides a comprehensive understanding of the critical role of interface engineering in enhancing the efficiency and stability of mixed Sn–Pb perovskite solar cells (PSCs). We primarily focus on the p–i–n architecture, systematically addressing the fundamental challenges and recent strategic breakthroughs at both the top exposed perovskite surface and the bottom buried interface. By detailing how surface engineering approaches mitigate interfacial defects and optimize charge‐carrier dynamics, this review emphasizes the direct correlation between precise interface control and the rapid performance enhancement in narrow‐bandgap single‐junction devices. Furthermore, we extend this discussion to the interconnecting layers in all‐perovskite tandem solar cells, where interfacial optimization is crucial for achieving effective charge transport. Ultimately, this review offers strategic perspectives on overcoming current interfacial hurdles to facilitate the transition of Sn–Pb PSC technology from laboratory‐scale research to large‐scale industrial applications.

  PublisherDOI

• <strong>High-Performance Annealing-Free InGaZnO_x Thin Film Transistors by Thermal </strong><strong>Atomic Layer Deposition</strong>

  Open MIND · 2026-01-01

  other

  We report indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) fabricated by thermal atomic layer deposition (TALD) within a low thermal budget ({less than or equal to} 300 {degree sign}C) and without post-deposition annealing. A targeted O₃ overdose step integrated into the Ga₂O₃ sub-cycles of the IGZO TALD super-cycle raises the local oxygen chemical potential and helps suppress inter-sub-cycle redox reactions and vacancy formation. Structural and chemical analyses confirm smooth, fully amorphous Al₂O₃/IGZO stacks with abrupt interfaces and reduced oxygen-vacancy signatures, while cation states remain stable. Standard TFTs fabricated from these layer stacks exhibit excellent device performance, including near-ideal subthreshold swing (SS) values of 66.4-70 mV dec^-1, operation windows within 3V, field-effect mobilities ranging between μ_FE = 23.6-25.6 cm²V^-1s⁻¹, threshold voltages (V_TH) close to 0 V, and negligible hysteresis. Under positive-bias temperature stress, ΔV_TH remains small across 25-85 {degree sign}C indicating good device reliability. A holistic comparison with prior ALD-based oxide TFTs, shows that the combination of low temperature processing, near-ideal SS, and small drift under stress places our devices on the favorable end of performance-stability tradeoff. The O₃ overdose concept presented here provides a generalizable lever for oxygen vacancy control in the TALD of multi-cation oxides and is naturally compatible with BEOL and monolithic 3D integration.

  DOI

• Recent Advances in Lithium Metal Anodes with Liquid Electrolytes: Interfacial Interaction‐Driven Assembly for Dendrite Suppression and Long‐Term Stability (Small 29/2026)

  Small · 2026-05-01

  article

  Lithium Metal Anodes In the Research Article (e13356), Yongmin Ko, Jinhan Cho, and co-workers illustrate an interfacial interaction-driven assembly strategy for a dendrite-free lithium metal anode enabled by electrode and separator modification. The inset images highlight homogenized Li ion flux through the modified separator and uniform Li plating on the modified electrode.

  PublisherDOI

• Supplemental Online Material

  AIP Publishing · 2026-01-01

  otherOpen access

  Supplemental Online Material

  PublisherDOI

• <strong>High-Performance Annealing-Free InGaZnO_x Thin Film Transistors by Thermal </strong><strong>Atomic Layer Deposition</strong>

  AIP Publishing · 2026-01-01

  otherOpen access

  We report indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) fabricated by thermal atomic layer deposition (TALD) within a low thermal budget ({less than or equal to} 300 {degree sign}C) and without post-deposition annealing. A targeted O₃ overdose step integrated into the Ga₂O₃ sub-cycles of the IGZO TALD super-cycle raises the local oxygen chemical potential and helps suppress inter-sub-cycle redox reactions and vacancy formation. Structural and chemical analyses confirm smooth, fully amorphous Al₂O₃/IGZO stacks with abrupt interfaces and reduced oxygen-vacancy signatures, while cation states remain stable. Standard TFTs fabricated from these layer stacks exhibit excellent device performance, including near-ideal subthreshold swing (SS) values of 66.4-70 mV dec^-1, operation windows within 3V, field-effect mobilities ranging between μ_FE = 23.6-25.6 cm²V^-1s⁻¹, threshold voltages (V_TH) close to 0 V, and negligible hysteresis. Under positive-bias temperature stress, ΔV_TH remains small across 25-85 {degree sign}C indicating good device reliability. A holistic comparison with prior ALD-based oxide TFTs, shows that the combination of low temperature processing, near-ideal SS, and small drift under stress places our devices on the favorable end of performance-stability tradeoff. The O₃ overdose concept presented here provides a generalizable lever for oxygen vacancy control in the TALD of multi-cation oxides and is naturally compatible with BEOL and monolithic 3D integration.

  PublisherDOI

• Field-modulated quantum dot solids enable exceptional gain–bandwidth product of infrared photodetector

  Research Square · 2025-05-14

  preprintOpen accessSenior author
  PublisherOA PDFDOI

• Anomalous Acoustocurrent within Quantum Hall Plateaus

  Physical Review Letters · 2025-04-03 · 1 citations

  article

  We systematically study the acoustocurrent of two-dimensional electron systems in the integer and fractional quantum Hall regimes using surface acoustic waves. We are able to separate the coexisting acoustic scattering and drag, when phonons induce a drag current and tune the electron conductivity, respectively. At large acoustic power, the drag current is finite when the system is compressible and exhibits minima when incompressible quantum Hall states appear. Surprisingly, it exhibits anomalously large bipolar spikes within the quantum Hall plateaus while it vanishes linearly with reduced acoustic power at compressible phases. The current peaks reverse their polarity at the two flanks of exact integer or fractional fillings, consistent with the opposite electric charge of the quasiparticle and quasihole.

  PublisherDOI

Frequent coauthors

• L. N. Pfeiffer

  46 shared

• K. W. Baldwin

  Princeton University

  42 shared

• M. Shayegan

  Princeton University

  36 shared

• K. W. West

  Princeton University

  30 shared

• Cheol Seong Hwang

  Seoul National University

  26 shared

• Un Ki Kim

  Seoul National University

  21 shared

• K. A. Villegas Rosales

  Princeton University

  14 shared

• Jeong Hwan Kim

  14 shared