Srabanti Chowdhury

About

Srabanti Chowdhury is a Professor of Electrical Engineering and a Senior Fellow at the Precourt Institute for Energy at Stanford University. She holds a courtesy appointment in Materials Science and Engineering. Her research focuses on electrical engineering with an emphasis on energy-related applications, contributing to the development of advanced materials and systems for energy efficiency and sustainability. As a senior fellow at the Precourt Institute for Energy, her work integrates electrical engineering principles with energy science to address critical challenges in energy storage, conversion, and management.

Research topics

• Materials science
• Computer Science
• Optoelectronics
• Electrical engineering
• Engineering
• Engineering physics
• Nanotechnology
• Physics
• Electronic engineering
• Acoustics

Selected publications

• Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

  ACS Applied Materials & Interfaces · 2021 · 120 citations

  Senior authorCorresponding

  /GaN interface, which is the closest to theoretical prediction to date. The diamond was integrated within ∼1 nm of the GaN channel layer without degrading the channel's electrical behavior. Furthermore, we successfully minimized the residual stress in the diamond layer, enabling more isotropic polycrystalline diamond growth on GaN with thicknesses >2 μm and a ∼1.9 μm lateral grain size. More isotropic grains can spread the heat in both vertical and lateral directions efficiently. Using transient…

  DOI

• Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I

  IEEE Transactions on Electron Devices · 2021 · 88 citations

  Recent years have witnessed a tremendous development of vertical gallium nitride (GaN) power devices, a new class of device technology that could be the key enabler for next-generation high performance power electronics. In this comprehensive review, we discuss the recent progress made on vertical GaN power devices, highlighting their important device design principles and fabrication processes. Part I of the two-part review series introduces the basic design principles of vertical GaN devices u…

  DOI

• Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II

  IEEE Transactions on Electron Devices · 2021 · 83 citations

  Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic devices and systems with higher energy efficiency, higher power density, faster switching, and smaller form factor. In Part I of this review, we have reviewed the basic design principles and physics of building blocks of vertical GaN power devices, i.e., Schottky barrier diodes and p-n diodes. Key topics such as materials engineering, device engineering, avalanche breakdown, and leakage mechanisms are disc…

  DOI

• A review of GaN RF devices and power amplifiers for 5G communication applications

  Fundamental Research · 2023 · 72 citations

  In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power amplifier, a critical component with stringent specification requirements that dictates the performance of the transmitter. The gallium nitride (GaN) device, with its superior inherent properties, is surfacing as a front-runner for power amplifier applications. The increasing demand for high frequency, high linearity, and cost-effective GaN power amplifiers is driven by anticipated traffic surges and the ne…

  PublisherDOI

• From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

  Journal of Physics Materials · 2024 · 63 citations

  Senior authorCorresponding

  Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequat…

  PublisherOA PDFDOI

Recent grants

• CAREER: A New GaN-based Unit Cell for Highly Efficient Integrated Power Conversion

  NSF · $394k · 2016–2020

Frequent coauthors

• Samuel Graham

  University of Maryland, College Park

  43 shared

• Marko J. Tadjer

  United States Naval Research Laboratory

  42 shared

• Sukwon Choi

  Pennsylvania State University

  40 shared

• Eric R. Heller

  United States Air Force Research Laboratory

  38 shared

• Mohamadali Malakoutian

  37 shared

• Gilberto Moreno

  National Renewable Energy Laboratory

  36 shared

• Sreekant Narumanchi

  National Renewable Energy Laboratory

  36 shared

• Dong Ji

  Chinese University of Hong Kong, Shenzhen

  30 shared

Awards & honors

• 2023 Technical Excellence Award from the Semiconductor Resea…
• 2025 Quantum Device Award for contribution to Vertical GaN d…
• 2020 Alfred P. Sloan Fellowship in Physics
• 2016 Young Scientist Award at the International Symposium on…
• DARPA Young Faculty Award (2015)

Similar researchers at Stanford University

• Alberto Salleoh-108
• Thomas Devereauxh-92
• Sarah Heilshornh-69