Shuji Nakamura

About

Shuji Nakamura is a professor in the Materials Department at the University of California, Santa Barbara. He is widely recognized as a pioneer in light emitters based on wide-bandgap semiconductors and has made significant advancements in the development of GaN thin film technology for high-efficiency Nitride-based LEDs and laser diodes. Nakamura's research focuses on electronic and photonic materials, and he has received numerous honors including the Nobel Prize in Physics, the Global Energy Prize, the Zayed Future Energy Prize, the Harvey Prize for advancements in Science and Technology, the Benjamin Franklin Medal in Engineering, and the Millennium Technology Prize. He holds the title of CREE Professor of Solid State Lighting and Displays and is affiliated with the Materials faculty at UC Santa Barbara.

Research topics

• Materials science
• Optoelectronics
• Optics
• Physics
• Nanotechnology
• Chemistry
• Atomic physics

Selected publications

• Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 <b> <i>μ</i> </b>m in diameter

  Applied Physics Letters · 2020 · 250 citations

  There is growing interest in microLED devices with lateral dimensions between 1 and 10 μm. However, reductions in external quantum efficiency (EQE) due to increased nonradiative recombination at the surface become an issue at these sizes. Previous attempts to study size-dependent EQE trends have been limited to dimensions above 5 μm, partly due to fabrication challenges. Here, we present size-dependent EQE data for InGaN microLEDs down to 1 μm in diameter fabricated using a process that only uti…

  DOI

• Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation

  Applied Physics Letters · 2020 · 182 citations

  Chemical etching and Al2O3 dielectric passivation were used to minimize nonradiative sidewall defects in InGaN/GaN microLEDs (mesa diameter = 2–100 μm), resulting in an increase in external quantum efficiency (EQE) as the LED size was decreased. Peak EQEs increased from 8%–10% to 12%–13.5% for mesa diameters from 100 μm to 2 μm, respectively, and no measurable leakage currents were seen in current density–voltage (J–V) characteristics. The position and shape of EQE curves for all devices were es…

  DOI

• Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments

  Optics Express · 2020 · 161 citations

  devices more than 150%. This indicated that AlGaInP µLEDs with ALD sidewall treatments can be used as the red emitter for full-color µLED display applications.

  DOI

• Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces

  Nature Photonics · 2020 · 119 citations

  DOI

• Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission

  Nature Communications · 2021 · 69 citations

  Phased-array metasurfaces have been extensively used for wavefront shaping of coherent incident light. Due to the incoherent nature of spontaneous emission, the ability to similarly tailor photoluminescence remains largely unexplored. Recently, unidirectional photoluminescence from InGaN/GaN quantum-well metasurfaces incorporating one-dimensional phase profiles has been shown. However, the possibility of generating arbitrary two-dimensional waveforms-such as focused beams-is not yet realized. He…

  DOI

Frequent coauthors

• Steven P. DenBaars

  743 shared

• James S. Speck

  University of California, Santa Barbara

  571 shared

• Shigefusa F. Chichibu

  Tohoku University

  143 shared

• Claude Weisbuch

  École Polytechnique

  127 shared

• Feng Wu

  University of California, Santa Barbara

  123 shared

• S. Keller

  University of California, Santa Barbara

  113 shared

• Umesh K. Mishra

  98 shared

• Kenji Fujito

  Mitsubishi Chemical (Japan)

  77 shared

Awards & honors

• Nobel Prize in Physics
• NAE
• NAI
• NIHF
• Royal Academy of Engineering CREE Professor of Solid State L…

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