Peter Bennett

About

Peter Bennett is a professor in the Department of Physics at Arizona State University, with a research focus on the structure, growth kinetics, and electron transport properties of self-assembled surface nanostructures. His group employs a variety of surface techniques, including Scanning Tunneling Microscopy (STM), Low Energy Electron Microscopy (LEEM), UHV-Transmission Electron Microscopy (UHV-TEM), Atomic Force Microscopy (AFM), Magneto-transport, and Electron Beam Lithography (EBL), combined with first-principles theory. Recent research has concentrated on metal/silicon systems capable of forming silicide nanowires, which are characterized by their nanoscale width, atomically perfect surfaces, and high quality, surpassing the capabilities of traditional top-down fabrication methods. These structures have potential applications in nanoscale interconnects, nanoelectrodes, sensors, and integrated silicon technology. Peter Bennett earned his Ph.D. in Physics from the University of Wisconsin-Madison in 1980 and his B.S. in Physics from the University of Minnesota-Duluth in 1974. His academic career at ASU began as an assistant professor in 1984, progressing to associate professor in 1990, and full professor in 1996. He served as the Department Chair of the Physics Department at ASU starting in 2013. Bennett has supervised numerous graduate students and postdoctoral researchers, contributing significantly to the fields of nanoscience, surface science, and materials physics. He…

Research topics

• Computer Science
• Engineering
• Process management

Selected publications

• Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth

  Nature Materials · 2008-03-09 · 275 citations

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  PublisherDOI

• Endotaxial silicide nanowires: A review

  Thin Solid Films · 2011-05-22 · 53 citations

  review1st authorCorresponding
  PublisherDOI

• Minority carrier effects in nanoscale Schottky contacts

  Nanotechnology · 2009-08-11 · 12 citations

  articleSenior author

  We report the current-voltage behavior for nanoscale point contacts to Si(111) obtained in ultrahigh vacuum using scanning tunneling microscopy. Epitaxial CoSi(2) islands provide single-crystal contacts with well-defined size and shape. The zero bias conductance is found to be independent of the island size (10(2)-10(4) nm(2)) and shape, but varies strongly with the surface Fermi level position. This behavior is explained by the recombination-generation current from minority carriers at the free…

  PublisherDOI

• Large hysteretic magnetoresistance of silicide nanostructures

  Physical Review B · 2007-11-06 · 11 citations

  article

  We demonstrate a large (as much as 100%) and strongly hysteretic magnetoresistance (MR) in nominally nonferromagnetic silicide films and nanowires. This unusual MR is quenched above a few kelvins, where conventional behavior due to weak antilocalization is recovered. The dynamic characteristics of this effect are suggestive of weakly interacting, localized paramagnetic moments that form at the surface oxide of the silicide nanostructures, with dramatic consequences for transport when the system…

  PublisherDOI

• Development and Testing of a Field Screening Method Based on Bubbling Extraction and Photoionization Detection for Measurement of Benzene and Total <scp>VOCs</scp>

  Groundwater Monitoring & Remediation · 2014-08-01 · 9 citations

  articleOpen access

  Abstract A field screening method was developed for rapid measurement of benzene and gasoline range total petroleum hydrocarbons (TPHg) concentrations in groundwater. The method is based on collecting photoionization detector (PID) measurements from vapor samples. The vapor samples are collected by bubbling air through groundwater samples (air sparging) with a constant volume, temperature and sparging rate. The level of accuracy, sensitivity, precision, and statistical significance of the estima…

  PublisherOA PDFDOI

Recent grants

• Insitu Transport Measurement of Epitaxial Nanostructures

  NSF · $312k · 2005–2010

• NIRT: Silicide Nanowires for Nanoelectronics

  NSF · $1.4M · 2003–2008

Frequent coauthors

• Zhian He

  Guangzhou Education Bureau

  13 shared

• David J. Smith

  13 shared

• Ian Robinson

  London Centre for Nanotechnology

  10 shared

• J. A. DONNELLY

  9 shared

• R. M. Tromp

  IBM (United States)

  7 shared

• P. O'Boyle

  6 shared

• R. J. Phaneuf

  University of Maryland, College Park

  6 shared

• J. A. Venables

  6 shared

Education

• Ph.D.

  University of Wisconsin-Madison

  1980

• B.S.

  University of Minnesota-Duluth

  1974

Awards & honors

• Fellow, American Physical Society

Similar researchers at Arizona State University

• Jingyue Liuh-74
• Stuart Lindsayh-63
• Richard Kirianh-54