Soft photonic skins with dynamic texture and colour control

Nature · 2026-01-07 · 5 citations

Thermal Processing Creates Water‐Stable PEDOT:PSS Films for Bioelectronics

Advanced Materials · 2025-03-03 · 39 citations

Organic mixed ionic-electronic conductors have emerged as a key material for the development of bioelectronic devices due to their soft mechanical properties, biocompatibility, and high volumetric capacitance. In particular, PEDOT:PSS has become a choice material because it is highly conductive, easily processible, and commercially available. However, PEDOT:PSS is dispersible in water, leading to delamination of films when exposed to biological environments. For this reason, chemical cross-linking agents such as (3-glycidyloxypropyl)trimethoxysilane (GOPS) are used to stabilize PEDOT:PSS films in water, but at the cost of decreased electrical performance. Here, it is shown that PEDOT:PSS thin films become water-stable by simply baking at high temperatures (>150 °C) for a short time (≈ 2 min). It is shown that heat-treated PEDOT:PSS films are as stable as their chemically-cross-linked counterparts, with their performance maintained for >20 days both in vitro and in vivo. The heat-treated films eliminate electrically insulating cross-linkers, resulting in a 3× increase in volumetric capacitance. Applying thermal energy using a focused femtosecond laser enables direct patterning of 3D PEDOT:PSS microstructures. The thermal treatment method is compatible with a wide range of substrates and is readily substituted into existing workflows for manufacturing devices, enabling its rapid adoption in the field of bioelectronics.

3066261.pdf

Open MIND · 2025-01-01

supplemental information

3066261.pdf

Open MIND · 2025-01-01

supplemental information

Electrochemically mutable soft metasurfaces

Nature Materials · 2024-11-13 · 42 citations

NeuroRoots, a bio-inspired, seamless brain machine interface for long-term recording in delicate brain regions

AIP Advances · 2024-08-01 · 20 citations

Scalable electronic brain implants with long-term stability and low biological perturbation are crucial technologies for high-quality brain–machine interfaces that can seamlessly access delicate and hard-to-reach regions of the brain. Here, we created “NeuroRoots,” a biomimetic multi-channel implant with similar dimensions (7 μm wide and 1.5 μm thick), mechanical compliance, and spatial distribution as axons in the brain. Unlike planar shank implants, these devices consist of a number of individual electrode “roots,” each tendril independent from the other. A simple microscale delivery approach based on commercially available apparatus minimally perturbs existing neural architectures during surgery. NeuroRoots enables high density single unit recording from the cerebellum in vitro and in vivo. NeuroRoots also reliably recorded action potentials in various brain regions for at least 7 weeks during behavioral experiments in freely-moving rats, without adjustment of electrode position. This minimally invasive axon-like implant design is an important step toward improving the integration and stability of brain–machine interfacing.

Direct‐Print 3D Electrodes for Large‐Scale, High‐Density, and Customizable Neural Interfaces

Advanced Science · 2024-11-26 · 15 citations

Silicon-based microelectronics can scalably record and modulate neural activity at high spatiotemporal resolution, but their planar form factor poses challenges in targeting 3D neural structures. A method for fabricating tissue-penetrating 3D microelectrodes directly onto planar microelectronics using high-resolution 3D printing via 2-photon polymerization and scalable microfabrication technologies are presented. This approach enables customizable electrode shape, height, and positioning for precise targeting of neuron populations distributed in 3D. The effectiveness of this approach is demonstrated in tackling the critical challenge of interfacing with the retina-specifically, selectively targeting retinal ganglion cell (RGC) somas while avoiding the axon bundle layer. 6,600-microelectrode, 35 µm pitch, tissue-penetrating arrays are fabricated to obtain high-fidelity, high-resolution, and large-scale retinal recording that reveals little axonal interference, a capability previously undemonstrated. Confocal microscopy further confirms the precise placement of the microelectrodes. This technology can be a versatile solution for interfacing silicon microelectronics with neural structures at a large scale and cellular resolution.

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Proceedings of the National Academy of Sciences · 2024-03-29 · 4 citations

Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Direct electron beam patterning of electro‐optically active PEDOT:PSS

Nanophotonics · 2024-01-03 · 20 citations

The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and -3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.