Kaustav Banerjee

About

Kaustav Banerjee is a Professor in the Department of Electrical and Computer Engineering at UC Santa Barbara. His research interests include nanoelectronics, physics, technology, and applications of low-dimensional nanomaterials, as well as 2D materials and their heterostructures. He also focuses on bioelectronics, quantum electronics, and the development of ultra-low power devices, circuits, and sensors. His work involves exploring the fundamental properties and technological applications of nanomaterials and low-dimensional systems, contributing to advancements in electronic and bioelectronic devices.

Research topics

• Quantum mechanics
• Engineering
• Physics
• Electrical engineering
• Nanotechnology
• Optoelectronics
• Computer Science
• Materials science
• Mathematics
• Condensed matter physics

Selected publications

• The future transistors

  Nature · 2023 · 540 citations

  Senior authorCorresponding
  PublisherDOI

• Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K

  Nature Communications · 2021 · 278 citations

  with high yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of the emitters exhibit biexciton cascaded emission, single-photon purities above 95%, and working temperatures up to 150 K. This methodology, coupled with possible plasmonic or optical micro-cavity integration, furthers the realization of scalable, room-temperature, and high-quality 2D single- and entangled-photon sources.

  PublisherOA PDFDOI

• Is negative capacitance FET a steep-slope logic switch?

  Nature Communications · 2020 · 157 citations

  Senior authorCorresponding

  The negative-capacitance field-effect transistor(NC-FET) has attracted tremendous research efforts. However, the lack of a clear physical picture and design rule for this device has led to numerous invalid fabrications. In this work, we address this issue based on an unexpectedly concise and insightful analytical formulation of the minimum hysteresis-free subthreshold swing (SS), together with several important conclusions. Firstly, well-designed MOSFETs that have low trap density, low doping in…

  DOI

• Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

  Advanced Materials · 2022-04-25 · 134 citations

  reviewOpen accessSenior authorCorresponding

  As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-…

  PublisherOA PDFDOI

• One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>/Metal Interfaces

  Physical Review Applied · 2021-06-28 · 68 citations

  articleSenior author

  Low-resistance ohmic contacts are a prerequisite for implementing two-dimensional transition-metal dichalcogenides (2D TMDs) in a host of applications. Edge contacts offer unique advantages, yet their electrical properties are not fully understood. Employing an $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ framework, the authors find that edge contacts to monolayer MoS${}_{2}$ are pinned to…

  PublisherDOI

Recent grants

• NSF:EAGER: 2D Layered Heterostructure based Tunnel Field-Effect Transistors (TFETs) and Circuits

  NSF · $178k · 2015–2017

• FET:Small: An Integrated Unipolar-0.5T0.5R RRAM Crossbar Array for Neuromorphic Computing

  NSF · $500k · 2021–2024

• SHF:Small: A CAD Framework for Coupled Electrical-Thermal Modeling of Interconnects in 3D Integrated Circuits

  NSF · $450k · 2009–2013

Frequent coauthors

• Wei Cao

  University of California, Santa Barbara

  62 shared

• Jiahao Kang

  East China University of Technology

  45 shared

• Wei Liu

  Tan Kah Kee Innovation Laboratory

  39 shared

• Chuan Xu

  Wellcome Sanger Institute

  37 shared

• Deblina Sarkar

  Massachusetts Institute of Technology

  35 shared

• R.W. Dutton

  26 shared

• Navin Srivastava

  26 shared

• Santanu Mahapatra

  22 shared

Labs

• Nanoelectronics Research LabPI

  Not provided

Education

• PhD, Electrical Engineering & Computer Sciences

  University of California Berkeley

  1999

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