Ivan Schuller

Energy-efficient Mott activation neuron for full-hardware implementation of neural networks

Nature Nanotechnology · 2021-03-18 · 155 citations

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Science · 2021-07-22 · 108 citations

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenk…

Quantum materials for energy-efficient neuromorphic computing: Opportunities and challenges

APL Materials · 2022 · 67 citations

Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short- and long-term plasticity. Simila…

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Nature Communications · 2021 · 31 citations

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: th…

High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VO₂-Based Neuromorphic Devices

ACS Nano · 2025-04-14 · 8 citations

, mediated by sites within the device gap that tend to switch at significantly lower voltages after electrical cycling, a tendency that persists through a brief thermal reset. High spatial resolution, large field-of-view, structure selectivity, and fast signal acquisition of DFXM provided insight into structural features of the filamentary channel and surrounding regions during voltage cycling.