About

Professor Eugene A. Fitzgerald is a Professor of Materials Science and Engineering at MIT and the CEO and Director of the Singapore-MIT Alliance for Research and Technology (SMART). His research focuses on pushing the limitations of electronic materials, particularly those created by imperfections such as point, line, and planar defects. Much of his group's efforts are concentrated on lattice-mismatched semiconductor systems, which involve layers in electronic materials and devices with different lattice parameters. These materials have potential applications in printing, storage, display, communications, and interconnects. The utility of these materials depends on understanding and eliminating crystalline defects generated by lattice mismatch. Professor Fitzgerald earned a BS in materials science and engineering at MIT in 1985 and a PhD at Cornell in 1989. Building on early experience at AT&T Bell Labs, he and colleagues invented high-mobility strained silicon and commercialized this technology through AmberWave Systems Corporation, which he co-founded in 1998. This technology is now used in most silicon integrated circuits in cell phones, computers, and other applications. He has also founded or co-founded six other companies specializing in semiconductors, water purification, and silicon-based high-efficiency multi-junction solar cells. As CEO and director of SMART, he led the development of manufacturable methods for integrating compound semiconductors into silicon integrated circuits, leading to the creation of a new silicon integrated circuit company in Singapore. Additionally, he is the co-author of the 2010 book Inside Real Innovation, which provides insights into the processes behind innovation.

Research topics

• Computer Science
• Optoelectronics
• Materials science
• Electronic engineering
• Nanotechnology
• Engineering
• Engineering physics
• Physics
• Optics

Selected publications

• Design and Comparison of Fully Integrated mm-Wave GaAs Power Amplifiers Using Physics-Based Compact Model

  2025-10-12

  article

  Millimeter-wave (mm-Wave) power amplifiers (PAs) are designed using a physics-based compact model and fabricated in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.15 \mu \mathrm{m}$</tex> GaAs pHEMT technology. The model is calibrated to match transistor-level I-V, C-V, and S-parameter characteristics and is shown to accurately predict the measured large signal circuit-level performance of the PA without further parameter adjustment. The PA consists of combined class-AB and class-C devices with a single-cascode configuration and is compared to a double-cascode configuration by analyzing nonlinear behavior of input capacitances. It performs 19.6 dBm OP1dB, 29.7 dBm OIP3, and 39.8% PAE at 5V supply. Measured error vector magnitude (EVM) is −30.5 dB at 10.1 dBm with 100 MHz bandwidth 256-QAM OFDM modulated signals at 24 GHz. The die size is only 0.3 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> excluding RF pads area, and the PA shows competitive performance at mm-Wave frequencies.

  PublisherDOI

• Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

  Materials Science and Engineering B · 2023-06-24

  article
  PublisherDOI

• Freestanding High-Resolution Quantum Dot Color Converters with Small Pixel Sizes

  ACS Applied Materials & Interfaces · 2022 · 21 citations

  • Computer Science
  • Materials science
  • Optoelectronics

  and a high resolution of >3600 ppi. The optical studies show that the QD film thickness required for efficient color conversion can be successfully realized even for the small pixel sizes. We further combine green and red pixels in a single converter to achieve white emission when combined with blue LED emission. The QD color converter design and processing are decoupled from the LED fabrication and can be easily scaled to wafer-size integration with arbitrary pixel sizes for QD-based RGB displays with ultrahigh resolution.

  PublisherDOI

• Design of 20-28 GHz GaAs Phase Shifter MMIC and Small Signal Validation using MVS-GaAs Model

  2022-10-16

  articleSenior author

  A wideband millimeter-wave phase shifter is designed and fabricated in 0.15 µm Gallium Arsenide (GaAs) high electron mobility transistor (HEMT) technology. It operates from 20 GHz to 28 GHz with 5 dB insertion loss and provides 70 degrees phase change between ON and OFF modes with 4 % phase error within the frequency range. The DC and small signal model of the GaAs HEMT is calibrated and validated in the phase shifter simulation against measurement. The designed phase shifter occupies only 0.42 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> including DC bias circuitry, which can be integrated together with mid- and low-power GaAs amplifiers in a phased array system for 5G millimeter-wave communications.

  PublisherDOI

• In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application

  Materials Science in Semiconductor Processing · 2022-03-29 · 3 citations

  article
  PublisherDOI

• A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

  Journal of Semiconductors · 2021 · 87 citations

  • Computer Science
  • Materials science
  • Electronic engineering

  Abstract The heterogeneous integration of III–V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications, such as HEMT or LED with integrated control circuitry. For heterogeneous integration, direct wafer bonding (DWB) techniques can overcome the materials and thermal mismatch issues by directly bonding dissimilar materials systems and device structures together. In addition, DWB can perform at wafer-level, which eases the requirements for integration alignment and increases the scalability for volume production. In this paper, a brief review of the different bonding technologies is discussed. After that, three main DWB techniques of single-, double- and multi-bonding are presented with the demonstrations of various heterogeneous integration applications. Meanwhile, the integration challenges, such as micro-defects, surface roughness and bonding yield are discussed in detail.

  PublisherDOI

• CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

  IEEE Transactions on Electron Devices · 2021-10-25 · 7 citations

  article

  In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${(}{R}_{c}{)} &lt; 0.1~\Omega \cdot $ </tex-math></inline-formula> mm for n-InGaAs and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.8~\Omega \cdot $ </tex-math></inline-formula> mm for p-GaAs can be achieved. A dc current gain of 45 with a collector–base breakdown voltage (BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cbo</sub> ) of 15.65 V is achieved. The ideality factor of the emitter–base current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}_{b}$ </tex-math></inline-formula> ) and base–collector current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}_{c}$ </tex-math></inline-formula> ) is 1.03 and 1.44, respectively, after RTA at 450 °C. The dc characteristics remain stable upon prolonged annealing at 450 °C for 45 min. This high thermal budget non-gold ohmic contact is suitable for Si-CMOS integration and enables the potential for hybrid III-V CMOS technology for 5G and mm-wave applications.

  PublisherDOI

• X-ray structure of acetylcholine-binding protein (AChBP) in complex with FL001888.

  2021-02-02

  paratext
  PublisherDOI

• X-ray structure of acetylcholine-binding protein (AChBP) in complex with FL001856.

  2021-02-02

  paratext
  PublisherDOI

• High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

  IEEE Journal of the Electron Devices Society · 2020-01-01 · 5 citations

  articleOpen access

  N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of 6 × 8 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> shows a dc gain of 55 at a collector current of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> = 4 mA, with high collector-emitter breakdown voltage of ~17 V. The high-frequency response with cutoff frequency (fT) of 23 GHz and maximum available frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications.

  PublisherOA PDFDOI

Frequent coauthors

• York Broadway

  247 shared

• H Ryan

  University Hospitals Plymouth NHS Trust

  198 shared

• Chuan Seng Tan

  Agency for Science, Technology and Research

  191 shared

• Chris Sharp

  173 shared

• Kwang Hong Lee

  Nanyang Technological University

  149 shared

• D.A. Antoniadis

  Massachusetts Institute of Technology

  148 shared

• H Torchio

  Columbia University

  148 shared

• Paul Lincoln

  148 shared

Education

• Ph.D., Materials Science and Engineering

  Massachusetts Institute of Technology

  1985

• M.S., Materials Science and Engineering

  Massachusetts Institute of Technology

  1980

• B.S., Materials Science and Engineering

  Massachusetts Institute of Technology

  1979

Awards & honors

• 2016 Distinguished Alumni Award, Cornell Department of Mater…
• 2011 Andrew S. Grove Award, IEEE
• 2004 George Smith Award, IEEE Electron Devices Society
• 1994 Robert Lansing Hardy Award, The Minerals, Metals & Mini…