About

Dingru Huang is an Assistant Professor specializing in modern Chinese literature and media, sinophone studies, environmental humanities, and posthumanism. Her research focuses on contemporary issues within Chinese literary and media contexts, exploring themes related to environmental concerns and posthumanist perspectives. As a faculty member at the Department of Asian and Middle Eastern Studies, she contributes to the understanding of Chinese cultural and literary developments, emphasizing the intersections of media, environment, and posthumanist thought.

Research topics

• Nanotechnology
• Condensed matter physics
• Physics
• Materials science
• Composite material
• Engineering physics
• Nuclear magnetic resonance
• Optics

Selected publications

• Competing explanations for spin-wave resonances in <i>L</i> 1 ₀ (001) Fe-Pd thin films with perpendicular magnetic anisotropy

  Physical Review Applied · 2025-09-02

  article1st authorCorresponding

  The Heisenberg exchange constant is crucial for magnetic nanoobject switching behavior. This work estimates the exchange stiffness of $L{1}_{0}$-ordered Fe-Pd thin films with perpendicular anisotropy, finding that the standard models fail to explain deviations in spin-wave resonance dispersion. Negative surface pinning or epitaxial stress-induced magnetoelastic gradients emerge as competing explanations for the discrepancy. Using ferromagnetic resonance at 112 GHz and micromagnetic simulations, the stiffness is determined as 8.2 \ifmmode\pm\else\textpm\fi{} 0.1 pJ/m, with implications for magnetic memory as low as 10-nm bit cells.

  PublisherDOI

• Unconventional superlattice ordering in intercalated transition metal dichalcogenide V$_{1/3}$NbS$_2$

  ArXiv.org · 2025-06-27

  preprintOpen access

  The interplay between symmetry and topology in magnetic materials makes it possible to engineer exotic phases and technologically useful properties. A key requirement for these pursuits is achieving control over local crystallographic and magnetic structure, usually through sample morphology (such as synthesis of bulk crystals versus thin-films) and application of magnetic or electric fields. Here we show that V$_{1/3}$NbS$_2$ can be crystallized in two ordered superlattices, distinguished by the periodicity of out-of-plane magnetic intercalants. Whereas one of these structures is metallic and displays the hallmarks of altermagnetism, the other superlattice, which has not been isolated before in this family of intercalation compounds, is a semimetallic noncollinear antiferromagnet that may enable access to topologically nontrivial properties. This observation of an unconventional superlattice structure establishes a powerful route for tailoring the tremendous array of magnetic and electronic behaviors hosted in related materials.

  PublisherOA PDFDOI

• Unconventional Superlattice Ordering in Intercalated Transition Metal Dichalcogenide V_1/3NbS₂

  Journal of the American Chemical Society · 2025-08-29 · 4 citations

  articleOpen access

  The interplay between symmetry and topology in magnetic materials makes it possible to engineer exotic phases and technologically useful properties. A key requirement for these pursuits is achieving control over local crystallographic and magnetic structure, usually through sample morphology (such as synthesis of bulk crystals versus thin films) and application of magnetic or electric fields. Here we show that V1/3NbS2 can be crystallized in two ordered superlattices, distinguished by the periodicity of out-of-plane magnetic intercalants. Whereas one of these structures is metallic and displays the hallmarks of altermagnetism, the other superlattice, which has not been isolated before in this family of intercalation compounds, is a semimetallic noncollinear antiferromagnet that may enable access to topologically nontrivial properties. This observation of an unconventional superlattice structure establishes a powerful route for tailoring the tremendous array of magnetic and electronic behaviors hosted in related materials and may expand their use in low-power spintronic or topological quantum devices.

  PublisherOA PDFDOI

• Fast magnetization precession and strong perpendicular magnetic anisotropy in ferrimagnetic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Mn</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math> thin films improved by a Pd buffer layer

  Physical review. B./Physical review. B · 2025-08-07 · 2 citations

  article

  Ferrimagnetic ${\mathrm{Mn}}_{4}\mathrm{N}$ thin films have low magnetization and perpendicular magnetic anisotropy (PMA), as required for fast and low current switching spintronics devices. However, there need to be improvements in the growth of epitaxial quality films with fast spin dynamics for such spintronic applications. Here we prepared ${\mathrm{Mn}}_{4}\mathrm{N}$ thin films with a Pd buffer layer and investigated the crystalline structure and magnetic properties. We demonstrated that both crystalline quality and PMA of ${\mathrm{Mn}}_{4}\mathrm{N}$ thin films are enhanced significantly due to the relaxation of tensile stress induced by the Pd buffer layer. We also demonstrated a fast magnetization precession at room temperature, almost 100 GHz. With the characteristics of high thermal stability, enhanced PMA by buffer layer, and fast magnetization precession, ${\mathrm{Mn}}_{4}\mathrm{N}$ thin films are a promising material for spintronic applications.

  PublisherDOI

• Optimizing time-resolved magneto-optical Kerr effect for high-fidelity magnetic characterization

  Applied Physics Letters · 2025-07-28 · 2 citations

  articleOpen access

  Spintronics has emerged as a key technology for fast and nonvolatile memory with great CMOS compatibility. As the building blocks for these cutting-edge devices, magnetic materials require precise characterization of their critical properties, such as the effective anisotropy field (Hk,eff, related to magnetic stability) and damping (α, a key factor in device energy efficiency). Accurate measurements of these properties are essential for designing and fabricating high-performance spintronic devices. Among advanced metrology techniques, time-resolved magneto-optical Kerr effect (TR-MOKE) stands out for its superb temporal and spatial resolutions, surpassing traditional methods like ferromagnetic resonance. However, the full potential of TR-MOKE has not yet been fully fledged due to the lack of systematic optimization and robust operational guidelines. In this study, we address this gap by developing experimentally validated guidelines for optimizing TR-MOKE metrology across materials with perpendicular magnetic anisotropy and in-plane magnetic anisotropy. While Co20Fe60B20 thin films are used for experimental validation, this optimization framework can be readily extended to a variety of materials such as L10-FePd with easy-axis dispersion. Our work identifies the optimal ranges of the field angle to simultaneously achieve high signal amplitudes and improve measurement sensitivities to Hk,eff and α. By suppressing the influence of inhomogeneities and boosting sensitivity, our work significantly enhances TR-MOKE capability to extract magnetic properties with high accuracy and reliability. This optimization framework positions TR-MOKE as an indispensable tool for advancing spintronics, paving the way for energy-efficient and high-speed devices that will redefine the landscape of modern computing and memory technologies.

  PublisherOA PDFDOI

• Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer

  ArXiv.org · 2025-02-19

  preprintOpen access

  Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline structure and magnetic properties affected by the Pd buffer layer. We demonstrated that both crystalline quality and perpendicular magnetic anisotropy (PMA) of Mn4N thin films are enhanced significantly due to the relaxation of tensile stress induced by the Pd buffer layer. We also demonstrated a fast spin precession at room temperature, almost 100 GHz, in Mn4N thin films. With the characteristics of high thermal stability, enhanced PMA by buffer layer and fast spin precession, Mn4N thin film is a promising material for spintronic applications.

  PublisherOA PDFDOI

• Acceleration of ferromagnetic resonance measurements by Bayesian experimental design

  Review of Scientific Instruments · 2024-10-01 · 1 citations

  article1st authorCorresponding

  Ferromagnetic resonance (FMR) is a broadly used dynamical measurement used to characterize a wide range of magnetic materials. Applied research and development on magnetic thin film materials is growing rapidly alongside a growing commercial appetite for magnetic memory and computing technologies. The ability to execute high-quality, fast FMR surveys of magnetic thin films is needed to meet the demanding throughput associated with rapid materials exploration and quality control. Here, we implement optimal Bayesian experimental design software developed by [McMichael et al. J. Res. Natl. Inst. Stand. Technol. 126, 126002 (2021)] in a vector network analyzer-FMR setup to demonstrate an unexplored opportunity to accelerate FMR measurements. A systematic comparison is made between the optimal Bayesian measurement and the conventional measurement. Reduced uncertainties in the linewidth and resonance frequency ranging from 40% to 60% are achieved with the Bayesian implementation for the same measurement duration. In practical terms, this approach reaches a target uncertainty of ±5 MHz for the linewidth and ±1 MHz for the resonance frequency in 2.5× less time than the conventional approach. As the optimal Bayesian approach only decreases random errors, we evaluate how large systematic errors may limit the full advantage of the optimal Bayesian approach. This approach can be used to deliver gains in measurement speed by a factor of 3 or more and as a software add-on has the flexibility to be added on to any FMR measurement system to accelerate materials discovery and quality control measurements, alike.

  PublisherDOI

• Magnetization dynamics in synthetic antiferromagnets with perpendicular magnetic anisotropy

  Physical review. B./Physical review. B · 2023-06-26 · 15 citations

  article1st authorCorresponding

  Understanding the rich physics of magnetization dynamics in perpendicular synthetic antiferromagnets (p-SAFs) is crucial for developing next-generation spintronic devices. In this work, we systematically investigate the magnetization dynamics in p-SAFs combining time-resolved magneto-optical Kerr effect (TR-MOKE) measurements with theoretical modeling. These model analyses, based on a Landau-Lifshitz-Gilbert approach incorporating exchange coupling, provide details about the magnetization dynamic characteristics including the amplitudes, directions, and phases of the precession of p-SAFs under varying magnetic fields. These model-predicted characteristics are in excellent quantitative agreement with TR-MOKE measurements on an asymmetric p-SAF. We further reveal the damping mechanisms of two precession modes coexisting in the p-SAF and successfully identify individual contributions from different sources, including Gilbert damping of each ferromagnetic layer, spin pumping, and inhomogeneous broadening. Such a comprehensive understanding of magnetization dynamics in p-SAFs, obtained by integrating high-fidelity TR-MOKE measurements and theoretical modeling, can guide the design of p-SAF-based architectures for spintronic applications.

  PublisherDOI

• Sputtered <i>L</i>1₀‐FePd and its Synthetic Antiferromagnet on Si/SiO₂ Wafers for Scalable Spintronics

  Advanced Functional Materials · 2023-02-20 · 14 citations

  articleOpen access

  Abstract As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L 1 0 ‐FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub‐5 nm sizes. However, the compatibility requirement of preparing L 1 0 ‐FePd thin films on Si/SiO 2 wafers is still unmet. In this paper, high‐quality L 1 0 ‐FePd and its SAF on Si/SiO 2 wafers are prepared by coating the amorphous SiO 2 surface with an MgO(001) seed layer. The prepared L 1 0 ‐FePd single layer and SAF stack are highly (001)‐textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X‐ray diffraction measurement and atomic resolution‐scanning transmission electron microscopy, are conducted to explain the outstanding performance of L 1 0 ‐FePd layers. A fully‐epitaxial growth that starts from MgO seed layer, induces the (001) texture of L 1 0 ‐FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.

  PublisherOA PDFDOI

• FePd Single Layer and Synthetic Antiferromagnet with Low Damping and Crystalline Perpendicular Magnetic Anisotropy on Amorphous Si/SiO₂ Wafers

  2023-05-01

  article

  (001)-textured L1<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>-phase FePd possesses strong crystalline perpendicular magnetic anisotropy (PMA) and low Gilbert damping constant and thus, is considered a promising material choice for scalable spintronic devices. To date, however, well-textured L1<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>-FePd(001) thin films can only be prepared on a few expensive substrates, which directly impedes their industry compatibility and application prospect. In this digest, we report the deposition of L1<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>-FePd(001) single layer and synthetic antiferromagnet (SAF) on industry-ready Si/SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> wafers with large PMA, low damping, and strong antiferromagnetic interlayer exchange coupling. The microstructures of L1<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>-FePd(001) single layer and SAF were imaged using scanning transmission electron microscopy. We observed sharp and flat interfaces between each layer as well as the heteroepitaxial growth of sample stacks, which explains the high performance of the samples.

  PublisherDOI

Frequent coauthors

• Xiaojia Wang

  23 shared

• Yingying Zhang

  University of Minnesota

  11 shared

• Xuewang Wu

  3M (United States)

  10 shared

• Chi Zhang

  9 shared

• M. Thompson

  3M (United States)

  9 shared

• Jian‐Ping Wang

  8 shared

• Daniel B. Gopman

  National Institute of Standards and Technology

  7 shared

• J. P. Podkaminer

  University of Wisconsin–Madison

  6 shared

Education

• Ph.D. student, Mechanical Engineering

  University of Minnesota