About

Dimitri Antoniadis is the Ray and Maria Stata Professor of Electrical Engineering and Computer Science at MIT. His research focuses on electrical engineering and computer science, particularly in the areas of electronic, magnetic, optical, and quantum materials and devices, as well as nanoscale materials, devices, and systems. As a professor emeritus, he has contributed to the development of groundbreaking sensors, energy transducers, and physical substrates for computation, addressing shared challenges facing humanity through innovative systems and physical technologies.

Research topics

• Materials science
• Computer Science
• Engineering
• Optoelectronics
• Physics
• Condensed matter physics
• Quantum mechanics
• Chemistry
• Industrial engineering
• Electronic engineering
• Electrical engineering
• Chemical physics
• Operations management
• Mathematics

Selected publications

• Single-domain Switching Dynamics in BEOL Nanoscale Ferroelectric Field-effect Transistors

  2025-12-06

  article

  We study polarization switching dynamics in back-end-of-the-line (BEOL) oxide-channel ferroelectric field-effect transistors (FE-FETs) based on 10 nm thick FE-HfZrO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (FE-HZO). We demonstrate single-domain switching in nanoscale devices at a voltage amplitude < 1.8 V and pulse width < 10 ns. Leveraging this device platform, we have studied FE polarization accumulation and relaxation in response to a pulse train in wide as well as very narrow devices where we can observe single-domain switching. Remarkably, polarization accumulation and relaxation dynamics is virtually identical in both types of devices, suggesting a large stochasticity in single domain switching which dominates that of a large domain ensemble.

  PublisherDOI

• Enhancement-mode BEOL In ₂ O ₃ FETs with Record Logic Performance: Experiments and Compact Modeling

  2025-12-06

  article

  We demonstrate record logic performance in back-end-of-the-line (BEOL)-compatible enhancement-mode (Emode) amorphous oxide semiconductor (AOS) field-effect transistors (FETs). These devices exhibit near-ideal scalability down to 40 nm in channel length (L<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ch</inf>). Using an In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> channel by plasma-enhanced atomic-layer deposition (PEALD), we achieve E-mode operation in L<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ch</inf> = 40 nm devices with a maximum drive current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf>) of 1.35 mA/µm, a peak transconductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m,peak</inf>) of 490 µS/µm, and a close-to-thermal-limit average room-temperature subthreshold swing (S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">avg</inf>) of 63 mV/dec, all at a drain-to-source voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf>) of 0.5 V. A total source (S) and drain (D) resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sd</inf>) of 169 Ω.µm, record-low among E-mode AOS-FETs, is demonstrated. Capacitance-voltage (C-V) characteristics reveal different threshold voltages (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf>) in the intrinsic channel and in the S/D to gate (G) overlap regions. We develop a physics-based MVS-AOS model which accurately captures the essential physics at play in our experimental devices, including C with frequency dispersion in the S/D region. This work advances state-of-the-art BEOL AOS-FET technology, and paves the way for future design-technology co-optimization (DTCO) on this promising device platform for BEOL monolithic 3D integration.

  PublisherDOI

• Discrete Ferroelectric Polarization Switching in Nanoscale Oxide-Channel Ferroelectric Field-Effect Transistors

  Nano Letters · 2025-02-13 · 3 citations

  article

  In this work, we study polarization switching behavior in scaled hafnium-zirconium oxide (HZO) ferroelectric (FE) field-effect transistors with an amorphous oxide-semiconductor channel with dimensions down to the FE domain level. Channel thickness scaling acts as an effective approach to memory window (MW) enhancement. With an indium-tin oxide channel thickness of 2.5 nm, we demonstrate a large MW of 2.2 V. Discrete FE polarization switching is observed in narrow- and short-channel transistors, where a small number of FE domains are involved. Based on a detailed MW scaling study with channel length, we estimate the size of the FE domain in our HZO to be ∼40 nm. Fatigue experiments in nanoscale transistors reveal the dominant role of FE domain pinning, which leads to negative threshold voltage shift and degraded MW. Our results open up a new avenue for probing FE physics based on single domain behavior.

  PublisherDOI

• Highly-Scaled BEOL E-Mode Transistor and Discrete-Domain Ferroelectric Memory Platform Enabled by PEALD In₂O₃

  2024-12-07 · 3 citations

  article

  We demonstrate a back-end-of-the-line (BEOL) platform with highly scaled active area based on ultra-thin In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O3 channel by plasma-enhanced atomic-layer deposition (PEALD). Enhancement-mode (E-mode) FETs with record on-current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(I_{\text{on}}) &gt; 1\ \text{mA}/\mu \mathrm{m}$</tex> and peak transconductance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(g_{\mathrm{m},\text{pk}}) &gt; 400\mu \mathrm{S}/\mu \mathrm{m}$</tex> at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{ds}}=0.5\mathrm{V}$</tex> are demonstrated. We show that channel width scaling enables a more positive threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{\mathrm{t}})$</tex> coupled with a dramatic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$g_{\mathrm{m},\text{pk}}$</tex> improvement. We further integrate ferroelectric (FE) memory functionality into the platform and show single FE domain switching in FE-FETs with highly-scaled active area. Ultrafast switching down to the 10 ns instrument limit, excellent retention over 1000 s, and outstanding write endurance of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cycles <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">are</sup> demonstrated. Using discrete domain switching as a sensitive probe, individual domain wake-up and fatigue are observed. Our work reveals exciting physics in nanoscale BEOL devices with potential for logic and memory applications.

  PublisherDOI

• On the Imprint Mechanism of Thin-Film Hf₀.₅Zr₀.₅O₂ Ferroelectrics

  IEEE Transactions on Electron Devices · 2024-09-30 · 10 citations

  articleSenior author

  Imprint is a well-known phenomenon in metal–ferroelectric–metal (MFM) capacitors, yet the causal mechanisms are still unclear. The currently prevailing theory is that it is caused by variation, over the imprinting time, of internal electric fields that are due to charge displacement and incomplete polarization charge screening due to thin nonpolarizable layers at the interface between the polarizable ferroelectric (FE) phase and the electrodes. In the present work, by studying both imprint and its reversal in thin-film Hf0.5Zr0.5O2 (HZO) capacitors, we find that the dominant mechanism in imprinting and deimprinting is the variation of the activation electric field, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{a}$ </tex-math></inline-formula>, of nucleation of reversed polarity seeds in the individual domains of the film, postulated by the nucleation-limited FE switching theory. The displacement of any significant magnitude of charge does not appear to be involved in the FE imprint/deimprint phenomena, at least in thin-film HZO. The varying <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E} _{a}$ </tex-math></inline-formula> is likely a manifestation of seed inhibition, and it captures well the macroscopic phenomenology of imprint, but the detailed microscopic physical mechanism behind it is still unclear.

  PublisherDOI

• AC Impedance Characteristics of Ferroelectric Hf_0.5Zr_0.5O₂: from 1 kHz to 10 GHz

  2023-12-09 · 4 citations

  article

  We have carried out extensive characterization of the AC impedance of W/HZO/W ferroelectric structures from 1 kHz to 10 GHz. We have found that the distinct butterfly shape of the C-V characteristics persists up to the highest frequencies but its frequency dependence is extinguished around 1 GHz. We also find that the AC conductance increases with frequency. The frequency dispersion of capacitance is consistent with electron trapping at border traps close to the W/HZO interface. The C-V butterfly shape in the GHz range is postulated to arise from electron depletion and accumulation at the W/HZO interface. The frequency dependence of AC conductance is consistent with the universal dielectric response theory through the correlated barrier hoping model.

  PublisherDOI

• Switching Dynamics in Metal–Ferroelectric HfZrO₂–Metal Structures

  IEEE Transactions on Electron Devices · 2022-05-26 · 9 citations

  articleSenior author

  The existence of negative capacitance (NC) and the switching dynamics of ferroelectric HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (FE-HZO) metal–ferroelectric–Metal (MFM) structures are still contentious and unclear. Experiments with HZO MFM structures have yielded contradictory results. In this work, we perform a detailed study of the switching characteristics of HZO MFM structures. We have developed a pulse measurement setup that aims to minimize and carefully calibrate all circuit and sample parasitics. This allows us to isolate the intrinsic dynamic response of MFM FE-HZO structures. In contrast to other reports ON resistor-MFM (R-MFM) networks, no evidence of NC effect is observed over a broad range of conditions. Instead, in all cases, the extracted charge–voltage characteristics closely match the quasi-static hysteresis loop. In addition, we have confirmed that charge–voltage loops under the fast switching MFM configuration achievable in our experimental setup are consistent with those of R-MFM networks. Our study makes evident the crucial role of parasitics in the dynamic characterization of R-MFM circuits and the potential for misinterpretation of NC effects.

  PublisherDOI

• Antiferroelectric negative capacitance from a structural phase transition in zirconia

  Nature Communications · 2022 · 59 citations

  • Condensed matter physics
  • Materials science
  • Chemical physics

  and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.

  PublisherOA PDFDOI

• Nucleation-Limited Switching Dynamics Model for Efficient Ferroelectrics Circuit Simulation

  IEEE Transactions on Electron Devices · 2021-12-07 · 27 citations

  article1st authorCorresponding

  The nucleation-limited switching (NLS) model has been shown in the literature to explain successfully the dynamics of polarization switching of polycrystalline ferroelectric films (FE) in various experiments. However, because of its mathematical complexity, the NLS model has yet to be implemented correctly and efficiently in the simulation of actual, experimental circuits with complex driving waveforms. Here, we reformulate NLS as a generalized polarization rate equation that captures correctly the incubation time of nucleation and the intra- and inter-grain switching statistics of kinetics without any restrictions on waveform and switching time scales. This formulation forms the basis for efficient numerical finite-difference computation, which is verified in realistic circuit simulations of a number of experiments.

  PublisherDOI

• A Density Metric for Semiconductor Technology [Point of View]

  Proceedings of the IEEE · 2020 · 48 citations

  • Computer Science
  • Computer Science
  • Industrial engineering

  Since its inception, the semiconductor industry has used a physical dimension (the minimum gate length of a transistor) as a means to gauge continuous technology advancement. This metric is all but obsolete today. As a replacement, we propose a density metric, which aims to capture how advances in semiconductor device technologies enable system-level benefits. The proposed metric can be used to gauge advances in future generations of semi-conductor technologies in a holistic way, by accounting for the progress in logic, memory, and packaging/integration technologies simultaneously.

  PublisherDOI

Frequent coauthors

• Eugene A. Fitzgerald

  Singapore-MIT Alliance for Research and Technology

  148 shared

• Henry I. Smith

  73 shared

• K. L. Pey

  Singapore University of Technology and Design

  60 shared

• Judy L. Hoyt

  47 shared

• Jesús A. del Alamo

  37 shared

• Minjoo Larry Lee

  36 shared

• R.W. Dutton

  29 shared

• W. K. Chim

  National University of Singapore

  28 shared

Education

• Ph.D., Electrical Engineering and Computer Science

  Massachusetts Institute of Technology

  1996

• M.S., Electrical Engineering and Computer Science

  Massachusetts Institute of Technology

  1992

• B.S., Electrical and Computer Engineering

  National Technical University of Athens

  1989