
Alexander Zaslavsky
· Professor of Engineering and PhysicsVerifiedBrown University · Civil Engineering
Active 1958–2026
About
Alexander Zaslavsky is a Professor of Engineering and Physics at Brown University. His research interests include electronic materials and devices, quantum-effect devices, CMOS and beyond-CMOS technology. He is involved in undergraduate research and serves as a concentration advisor in Electrical Engineering. Zaslavsky has received recognition for his contributions, including the Brown University President’s Award for Excellence in Faculty Governance. His work has been recognized through awards and funding, such as the $3.4 million Army Research funds awarded to him and Xiao for cryogenic magnetic camera development. He is also among university researchers designing circuitry for agreement between NIST and Google.
Research signals
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Research topics
- Chemical physics
- Cancer research
- Biology
- Medicine
- Immunology
- Atomic physics
- Computational chemistry
- Physics
- Chemistry
- Genetics
- Quantum mechanics
- Physical chemistry
- Thermodynamics
Selected publications
Cell Communication and Signaling · 2026-03-28
articleOpen accessCastration-resistant prostate cancer (CRPC) progresses despite androgen deprivation therapy, as cancer cells adapt to grow without testosterone, becoming more aggressive and prone to metastasis. CRPC biology complicates the development of effective therapies, posing challenges for patient care. Recent gene-expression and metabolomics studies highlight the Hexosamine Biosynthetic Pathway (HBP) as a critical player, with key components like GNPNAT1 (Glucosamine-phosphate N-acetyltransferase 1) being downregulated in CRPC. GNPNAT1 knockdown in pre-clinical models has been shown to increase growth and metastasis in CRPC tumors, though the mechanisms remain unclear.To investigate the cellular basis of these CRPC phenotypes, we generated a CRISPR-Cas9 knockout model of GNPNAT1 in 22Rv1 CRPC cells, analyzing its impact on transcriptomic and glycoproteomic profiles of cells. We find that HBP inhibition disrupts the cytoskeleton, altering mitotic progression and promoting uncontrolled growth. GNPNAT1 KO cells showed reduced levels of cytoskeletal filaments, such as actin and microtubules, leading to cell structure disorganization and chromosomal mis-segregation. GNPNAT1 inhibition also activated PI3K/AKT signaling, promoting cell proliferation, impaired cell adhesion by mis-localizing Eph Receptor B6, enhancing migration via the RhoA (Ras homolog family member A) pathway and promoting epithelial-to-mesenchymal transition. These findings suggest that HBP plays a critical role in regulating CRPC cell behavior, and targeting this pathway could provide a novel therapeutic approach.
Preface: Calculus of variations, PDE and their Applications
HAL (Le Centre pour la Communication Scientifique Directe) · 2025-03-01
otherSenior authorThis preface is dedicated to the work of Luc Tartar.
Solid-State Electronics · 2025-12-02 · 1 citations
articleSenior authorThe Journal of Urology · 2025-04-08
articlePD16-07 ASSESSING CAUSES OF DEATH AMONG MEN WITH RECURRENT PROSTATE CANCER
The Journal of Urology · 2025-04-08
articleThe Journal of Urology · 2025-04-08
articleSenior authorImpact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory
IEEE Journal of the Electron Devices Society · 2025-01-01 · 1 citations
articleOpen accessThis paper presents a high-endurance capacitorless one-transistor (1T) cryogenic memory, fabricated in a 180 nm bulk CMOS technology, with a high memory window of (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10{^{{7}}}~I_{1}$ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{0}$ </tex-math></inline-formula> sense current ratio) and prolonged retention. The memory is enabled by the bistable <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{D}$ </tex-math></inline-formula>–<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{G}$ </tex-math></inline-formula> transistor characteristics due to impact ionization (II) at cryogenic temperatures (T < 30 K). Focusing on critical memory reliability parameters—switching time, endurance, and retention characteristics—we present write/erase speeds down to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\approx ~45$ </tex-math></inline-formula> ns at T < 10 K and cycling endurance surpassing <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{9}$ </tex-math></inline-formula> cycles while maintaining the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{1}$ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{0}$ </tex-math></inline-formula> memory window. Retention times of >10 s with a 30x memory window were observed in extensive high-speed measurements. The fast switching and retention characteristics combine to yield a low power (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>W-range) candidate for local cache memory to support quantum sensing or quantum computing control circuitry. Additionally, our study outlines essential measurements crucial for exploring the viability of alternative memory solutions for low-temperature quantum sensing and computation applications.
Integration of MTJ devices with cryo-CMOS readout circuitry for magnetic field sensing
SSRN Electronic Journal · 2025-01-01
preprintOpen accessSenior authorUrologic Oncology Seminars and Original Investigations · 2025-02-27
articleHigh-endurance bulk CMOS one-transistor cryo-memory
Solid-State Electronics · 2025-03-01 · 1 citations
article1st authorCorresponding
Recent grants
GOALI: Germanium-on-insulator tunneling transistors
NSF · $300k · 2007–2011
Strained Axial Si/Ge Heteronanowire Devices: From Tunneling Transistors to Optical Sources
NSF · $369k · 2011–2016
MRI: Acquisition of a Maskless Lithography Tool for the Brown Nanofabrication Central Facility
NSF · $287k · 2018–2020
Coulomb Blockade and Few-Electron Energy Spectra of Quantum Rings
NSF · $302k · 2003–2008
Frequent coauthors
- 295 shared
S. Cristoloveanu
Centre National de la Recherche Scientifique
- 272 shared
C. Le Royer
CEA LETI
- 240 shared
Jing Wan
Shaoxing University
- 96 shared
Son T. Le
- 88 shared
William R. Patterson
Brown University
- 80 shared
R. Iris Bahar
Brown University
- 71 shared
Sandra Ryeom
Columbia University
- 56 shared
Joseph L. Mundy
Providence College
Education
- 1991
PhD, Electrical Engineering
Princeton University
- 1986
AB, Physics
Harvard College
Awards & honors
- Brown University President’s Award for Excellence in Faculty…
- Hazeltine Innovation Awards (2024)
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