Charles Ahn
· John C. Malone Professor of Applied Physics and Professor of Mechanical Engineering and of PhysicsYale University · Department of Physics
Active 1995–2026
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About
Charles Ahn is the John C. Malone Professor of Applied Physics and a Professor of Mechanical Engineering and Physics at Yale University. His research group focuses on the fabrication and study of the physical properties of novel complex oxide materials, utilizing advanced growth and characterization techniques such as molecular beam epitaxy and synchrotron x-ray scattering. His current research interests include the physics and technology of multifunctional oxides, nanofabrication, electronic control of complex order parameters in correlated oxides, and the development of nonvolatile logic switches for post-CMOS computing paradigms. Dr. Ahn earned his Ph.D. from Stanford University in 1996 and has received numerous honors, including being a Fellow of the American Physical Society, the AVS Peter Mark Memorial Award, the David and Lucile Packard Fellowship in Science and Engineering, and the Alfred P. Sloan Fellowship. He has held leadership roles such as Director of the Yale SEAS Cleanroom, Director of the Yale Institute for Nanoscience and Quantum Engineering, and Director of the Yale Center for Research on Interface Structures and Phenomena, an NSF MRSEC. His work contributes significantly to the understanding and development of complex oxide materials and their applications in advanced electronic devices.
Research topics
- Computer Science
- Physics
- Materials science
- Condensed matter physics
- Quantum mechanics
- Chemistry
- Crystallography
- Optics
- Optoelectronics
- Nanotechnology
Selected publications
Designing and controlling the properties of transition metal oxide quantum materials
Nature Materials · 2021 · 97 citations
1st authorCorrespondingPhysical Review Letters · 2020 · 95 citations
Hafnia (HfO_{2})-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. Identifying and stabilizing the ferroelectric phases of HfO_{2} have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO_{2} are used to discover that imposing an in-plane shear strain on the metastable tetragonal phase drives it to a polar phase. This in-plane-shear-in…
Science Advances · 2023-07-05 · 58 citations
articleOpen accessSenior authorCorrespondingWe report on superconductivity in Nd 1− x Eu x NiO 2 using Eu as a 4f dopant of the parent NdNiO 2 infinite-layer compound. We use an all–in situ molecular beam epitaxy reduction process to achieve the superconducting phase, providing an alternate method to the ex situ CaH 2 reduction process to induce superconductivity in the infinite-layer nickelates. The Nd 1− x Eu x NiO 2 samples exhibit a step-terrace structure on their surfaces, have a T c onset of 21 K at x = 0.25, and have a large upper…
Advanced Materials Interfaces · 2020 · 42 citations
Senior authorCorrespondingAbstract In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk of a crystal are contained in the intensity and position of Bragg peaks in X‐ray diffraction, CTRs carry detailed information about the atomic structure at the interface. Developments in synchrotron X‐ray sources, instrumentation, and analysis procedures have made CTR measurements into extremely…
Solid state reduction of nickelate thin films
Physical Review Materials · 2023-01-31 · 31 citations
articleOpen accessSenior authorThe square-planar nickelates are a class of superconductors analogous to the cuprates and promise to provide insight into the pairing mechanism in high-temperature superconducting oxides. The parent phase of doped superconducting films is ${\mathrm{NdNiO}}_{2}$, which is prepared by reducing ${3}^{+}$ Ni in ${\mathrm{NdNiO}}_{3}$ films. In this paper, we develop an ultrahigh vacuum reduction method using aluminum deposited on top of the ${3}^{+}$ nickelates and monitor the reduction process in r…
Recent grants
Electronic Properties of Oxide-Semiconductor Interfaces
NSF · $226k · 2007–2010
Coupling Multifunctional Oxides to Semiconductors
NSF · $660k · 2013–2018
Center for Innovative Structures and Phenomena
NSF · $13.6M · 2011–2018
Frequent coauthors
- 412 shared
F. J. Walker
Yale University
- 165 shared
Sohrab Ismail‐Beigi
Yale University
- 83 shared
Ke Zou
University of British Columbia
- 79 shared
Divine P. Kumah
- 77 shared
C. A. F. Vaz
Paul Scherrer Institute
- 71 shared
Ankit Disa
Cornell University
- 57 shared
Eric I. Altman
Yale University
- 56 shared
Y. Segal
Massachusetts Institute of Technology
Awards & honors
- Fellow of the American Physical Society
- AVS Peter Mark Memorial Award
- David and Lucile Packard Fellowship in Science and Engineeri…
- Alfred P. Sloan Fellowship
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