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Nova · Professor Researcher · re-ranking top 20…
Alexander
   Zaslavsky

Alexander Zaslavsky

· Professor of Engineering and PhysicsVerified

Brown University · Civil Engineering

Active 1958–2026

h-index61
Citations12.6k
Papers48578 last 5y
Funding$1.3M
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About

Alexander Zaslavsky is a Professor of Engineering and Physics at Brown University. His research interests include electronic materials and devices, quantum-effect devices, CMOS and beyond-CMOS technology. He is involved in undergraduate research and serves as a concentration advisor in Electrical Engineering. Zaslavsky has received recognition for his contributions, including the Brown University President’s Award for Excellence in Faculty Governance. His work has been recognized through awards and funding, such as the $3.4 million Army Research funds awarded to him and Xiao for cryogenic magnetic camera development. He is also among university researchers designing circuitry for agreement between NIST and Google.

Research signals

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Research topics

  • Chemical physics
  • Cancer research
  • Biology
  • Medicine
  • Immunology
  • Atomic physics
  • Computational chemistry
  • Physics
  • Chemistry
  • Genetics
  • Quantum mechanics
  • Physical chemistry
  • Thermodynamics

Selected publications

  • The hexosamine biosynthetic pathway alters the cytoskeleton to modulate cell proliferation and migration in aggressive prostate cancer

    Cell Communication and Signaling · 2026-03-28

    articleOpen access

    Castration-resistant prostate cancer (CRPC) progresses despite androgen deprivation therapy, as cancer cells adapt to grow without testosterone, becoming more aggressive and prone to metastasis. CRPC biology complicates the development of effective therapies, posing challenges for patient care. Recent gene-expression and metabolomics studies highlight the Hexosamine Biosynthetic Pathway (HBP) as a critical player, with key components like GNPNAT1 (Glucosamine-phosphate N-acetyltransferase 1) being downregulated in CRPC. GNPNAT1 knockdown in pre-clinical models has been shown to increase growth and metastasis in CRPC tumors, though the mechanisms remain unclear.To investigate the cellular basis of these CRPC phenotypes, we generated a CRISPR-Cas9 knockout model of GNPNAT1 in 22Rv1 CRPC cells, analyzing its impact on transcriptomic and glycoproteomic profiles of cells. We find that HBP inhibition disrupts the cytoskeleton, altering mitotic progression and promoting uncontrolled growth. GNPNAT1 KO cells showed reduced levels of cytoskeletal filaments, such as actin and microtubules, leading to cell structure disorganization and chromosomal mis-segregation. GNPNAT1 inhibition also activated PI3K/AKT signaling, promoting cell proliferation, impaired cell adhesion by mis-localizing Eph Receptor B6, enhancing migration via the RhoA (Ras homolog family member A) pathway and promoting epithelial-to-mesenchymal transition. These findings suggest that HBP plays a critical role in regulating CRPC cell behavior, and targeting this pathway could provide a novel therapeutic approach.

  • Preface: Calculus of variations, PDE and their Applications

    HAL (Le Centre pour la Communication Scientifique Directe) · 2025-03-01

    otherSenior author

    This preface is dedicated to the work of Luc Tartar.

  • Progress towards integration of MTJ devices with cryo-CMOS readout circuitry for magnetic field sensing

    Solid-State Electronics · 2025-12-02 · 1 citations

    articleSenior author
  • PD10-11 DIGITAL SPATIAL PROFILING REVEALS TRANSCRIPTOMIC HETEROGENEITY OF PROSTATE CANCER IN PATIENTS WITH GERMLINE MUTATIONS

    The Journal of Urology · 2025-04-08

    article
  • PD16-07 ASSESSING CAUSES OF DEATH AMONG MEN WITH RECURRENT PROSTATE CANCER

    The Journal of Urology · 2025-04-08

    article
  • PD10-05 NARROW RANGE MOLECULAR INFLUENCE OF PROSTATE TUMORS ON SURROUNDING TISSUE REVEALED BY SPATIAL GENOMICS

    The Journal of Urology · 2025-04-08

    articleSenior author
  • Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory

    IEEE Journal of the Electron Devices Society · 2025-01-01 · 1 citations

    articleOpen access

    This paper presents a high-endurance capacitorless one-transistor (1T) cryogenic memory, fabricated in a 180 nm bulk CMOS technology, with a high memory window of (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10{^{{7}}}~I_{1}$ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{0}$ </tex-math></inline-formula> sense current ratio) and prolonged retention. The memory is enabled by the bistable <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{D}$ </tex-math></inline-formula>–<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{G}$ </tex-math></inline-formula> transistor characteristics due to impact ionization (II) at cryogenic temperatures (T < 30 K). Focusing on critical memory reliability parameters—switching time, endurance, and retention characteristics—we present write/erase speeds down to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\approx ~45$ </tex-math></inline-formula> ns at T < 10 K and cycling endurance surpassing <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{9}$ </tex-math></inline-formula> cycles while maintaining the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{1}$ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{0}$ </tex-math></inline-formula> memory window. Retention times of >10 s with a 30x memory window were observed in extensive high-speed measurements. The fast switching and retention characteristics combine to yield a low power (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>W-range) candidate for local cache memory to support quantum sensing or quantum computing control circuitry. Additionally, our study outlines essential measurements crucial for exploring the viability of alternative memory solutions for low-temperature quantum sensing and computation applications.

  • Integration of MTJ devices with cryo-CMOS readout circuitry for magnetic field sensing

    SSRN Electronic Journal · 2025-01-01

    preprintOpen accessSenior author
  • PATIENT-DERIVED RENAL CELL CANCER ORGANOIDS AS A MODEL TO ASSESS THERAPEUTIC TARGETS AND TREATMENT RESISTANCE MECHANISMS

    Urologic Oncology Seminars and Original Investigations · 2025-02-27

    article
  • High-endurance bulk CMOS one-transistor cryo-memory

    Solid-State Electronics · 2025-03-01 · 1 citations

    article1st authorCorresponding

Recent grants

Frequent coauthors

  • S. Cristoloveanu

    Centre National de la Recherche Scientifique

    295 shared
  • C. Le Royer

    CEA LETI

    272 shared
  • Jing Wan

    Shaoxing University

    240 shared
  • Son T. Le

    96 shared
  • William R. Patterson

    Brown University

    88 shared
  • R. Iris Bahar

    Brown University

    80 shared
  • Sandra Ryeom

    Columbia University

    71 shared
  • Joseph L. Mundy

    Providence College

    56 shared

Education

  • PhD, Electrical Engineering

    Princeton University

    1991
  • AB, Physics

    Harvard College

    1986

Awards & honors

  • Brown University President’s Award for Excellence in Faculty…
  • Hazeltine Innovation Awards (2024)
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